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Analysis of the interface of hydrogenated amorphous carbon films on silicon by angle-resolved x-ray photoelectron spectroscopy

机译：角度分辨X射线光电子能谱分析硅中氢化非晶碳膜膜的界面

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M. Kawasaki; G.J. Vandentop; M. Salmeron; G.A. Somorjai;
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1. X-ray photoelectron spectroscopy study of post-hydrogenated homogeneous chemically vapour-deposited amorphous silicon films [J] . Toneva A, Nenova Z, Marinova T, Philosophical Magazine, A. Physics of condensed matter, defects and mechanical properties . 1997,第2期

机译：氢化后均相化学气相沉积非晶硅膜的X射线光电子能谱研究
2. Fluorine incorporation into amorphous hydrogenated carbon films deposited by plasma-enhanced chemical vapor deposition: structural modifications investigated by X-ray photoelectron spectrometry and Raman spectroscopy [J] . M.E.H. Maia da Costa, F.L. Freire Jr., L.G. Jacobsohn Diamond and Related Materials . 2001,第3a7期

机译：将氟掺入通过等离子体化学气相沉积法沉积的非晶氢化碳膜中：通过X射线光电子能谱和拉曼光谱研究的结构修饰
3. Fluorine incorporation into amorphous hydrogenated carbon films deposited by plasma-enhanced chemical vapor deposition: structural modifications investigated by X-ray photoelectron spectrometry and Raman spectroscopy [J] . M. E. H. Maia da Costa, F. L. Freire Jr., L. G. Jacobsohn, Diamond and Related Materials . 2001,第3aPta2期

机译：将氟掺入通过等离子体化学气相沉积法沉积的非晶氢化碳膜中：通过X射线光电子能谱和拉曼光谱研究的结构修饰
4. A New NIST Database for the Simulation of Electron Spectra for Surface Analysis (SESSA): Application to Angle-Resolved X-ray Photoelectron Spectroscopy of HfO2, ZrO2, HfSiO4, and ZrSiO4 Films on Silicon [C] . C. J. Powell, W. Smekal, W. S. M. Werner International Conference on Characterization and Metrology for ULSI Technology . 2005

机译：用于仿真表面分析的电子光谱（Sessa）的新NIST数据库：在硅上的HFO2，ZrO2，HFSIO4和ZRSIO4薄膜的角度分辨X射线光电子能谱应用
5. Studies of the structural and electrical properties of the oxide/silicon interface via angle-resolved x-ray photoelectron spectroscopy, null ellipsometry, and capacitance-voltage measurements [D] . Jackson, Michael A. 1992

机译：通过角分辨X射线光电子能谱，零椭偏法和电容电压测量研究氧化物/硅界面的结构和电学性质
6. X-ray Photoelectron Spectroscopy Time-of-flight Secondary Ion Mass Spectrometry and Principal Component Analysis of the Hydrolysis Regeneration and Reactivity of NHS-containing Organic Thin Films [O] . Fang Cheng, Lara J. Gamble, David W. Grainger, -1

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7. Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x-ray photoelectron spectroscopy [O] . Beaudoin M., Arsenault C. J., Izquierdo R., 1989

机译：X射线光电子能谱法研究氢化非晶硅上氢化非晶硅的界面
8. Anisotropy in Hydrogenated Amorphous Silicon Films as Observed Using Polarized FTIR-ATR Spectroscopy [R] . A.H. Mahan, B.P. Nelson, E. Iwaniczko, 1999

机译：使用偏振FTIR-aTR光谱观察氢化非晶硅薄膜的各向异性

Analysis of the interface of hydrogenated amorphous carbon films on silicon by angle-resolved x-ray photoelectron spectroscopy

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