High-resolution X-ray diffraction and X-ray topography study of GaN on Al_2O_3

摘要

High resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with wimilar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.