机译:通过分子束外延在Si(001)和Ge(001)衬底上生长的SiGe外延层的结构研究:Ⅰ-高分辨率x射线衍射和x射线形貌
School of Electrical, Computer and Energy Engineering, Ira A Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, AZ 85287, USA;
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 79776, USA;
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 79776, USA;
Department of Electrical and Computer Engineering, University of Delaware, Newark, DE 79776, USA;
CHESS (Cornell High Energy Synchrotron Source), 277 Wilson Laboratory, Cornell University, Ithaca, NY 14853, USA;
School of Electrical, Computer and Energy Engineering, Ira A Fulton Schools of Engineering, Solar Power Lab, Arizona State University, Tempe, AZ 85287, USA;
A1. Characterization; A1. Defects; A3. Molecular beam epitaxy; B1. Germanium silicon alloys;
机译:通过分子束外延在Si(001)和Ge(001)衬底上生长的SiGe外延层的结构研究:Ⅱ-透射电子显微镜和原子力显微镜
机译:在(001),(011)和(111)Si衬底上生长的SiGe层中弛豫和位错的高分辨率x射线衍射研究
机译:分子束外延生长在SrTiO_3(001)衬底上的铁磁Co_4N外延膜的X射线磁圆二向色性
机译:通过分子束外延在预构造Si 001衬底上生长的SiGe阶梯梯度缓冲层的结构表征
机译:通过分子束外延生长的碳化硅/硅(001)和碳化锗/锗(001)合金中的碳结合途径和晶格位点分布。
机译:通过分子束外延在MgO(001)衬底上裁剪极性和非极性ZnO平面
机译:通过分子束外延生长在SrTiO3(001)衬底上的铁磁Co4N外延膜的X射线磁圆二向色性