High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

摘要

This work presents a detailed characterization, using high-resolution x-ray diffraction, of multilayered Si_(1-x)Ge_x heterostructures grown on (001), (011), and (111) Si substrates by reduced pressure chemical vapor deposition. Reciprocal space mapping has been used to determine both the strain and Ge concentration depth profiles within each layer of the heterostructures after initially determining the crystallographic tilt of all the layers. Both symmetric and asymmetric reciprocal space maps were measured on each sample, and the evaluation was performed simultaneously for the whole data set. The ratio of misfit to threading dislocation densities has been estimated for each individual layer based on an analysis of diffuse x-ray scattering from the defects.