Comparison of novel chlorine, bromine, and lodine plasma chemistries for anisotropic trench etching in GaN, InN, and AiN

摘要

Anisotropic pattern transfer has been performed for GaN, InN and AlN in Cl_2/Ar, BI_3/Ar and BBr_3/Ar Inductively Coupled Plasmas (ICP). Controlled etch rates in the range of 500-1500 A centre dot min~(-1) are obtained for III-nitride materials in Cl_2/Ar chemistry. Etch selectivities of 100:1 were achieved for InN over both GaN and AlN in the BI_3 mixtures, while for BBr_3 discharges values of 100:1 for InN over AlN and 25:1 for InN over GaN were measured.