An Embedded Power Section with GaN HEMTs

摘要

Embedding is a technology which permits to build highly integrated, compact power sections. It also helps to minimise parasitic elements within the power sections, this way facilitating the use of novel, fast switching devices like gallium-nitride (GaN) high electron mobility transistors (HEMTs). This paper deals with required processes and the development of a power section with GaN HEMTs for a three phase drive inverter with a nominal power in the lower kW range; a version with discrete devices has also been built as a benchmark for the embedded solution.