A Novel Truncated V-groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific On-resistance

摘要

A breakdown of a conventional trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is caused by oxide breakdown at the bottom of the trench. We have fabricated a novel trench SiC MOSFET with buried p~+ regions and demonstrated the high breakdown voltage of 1700 V and the specific on-resistance,of 3.5 mΩ cm~2.