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Low voltage mosfet with low on-resistance and high breakdown voltage
Low voltage mosfet with low on-resistance and high breakdown voltage
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机译:具有低导通电阻和高击穿电压的低压MOSFET
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摘要
A low voltage power MOSFET is disclosed which includes spaced apart base regions defining a conduction region therebetween. A highly doped region is provided adjacent the conduction region and is spaced from the base regions, being substantially equidistant thereto and extending therebelow. The spacing of the highly doped region from the base regions provides enhanced conductivity of the device and avoids the problem of device breakdown and punchthrough in regard to the source regions of the low voltage power device.
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