Recently, p-channel 4H-SiC MOSFETs have attracted much attention in complementary inverter and CMOSIC applications [1]. However, their practical use is impeded by the high channel resistance [1]. Therefore, it is necessary to analyze the mechanism of the low channel mobility. However, there are only a few reports on channel mobility for p-channel 4H-SiC MOSFETs [2, 3]. To understand the channel carrier transport mechanisms, the Hall-effect measurement for the channel region of MOSEFTs is effective because the field-effect mobility (?FE) suffers from the uncertainty in channel carrier concentration [4]. In this work, we evaluated the impact of passivation treatments on both the field-effect mobility and channel Hall mobility for p-channel 4H-SiC MOSFETs.
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