Design of 3.1-6.0 GHz CMOS Ultra-Wideband Low Noise Amplifier with Forward Body Bias Technique For Wireless Applications

摘要

This paper presents a design of 3.1-6.0 GHz CMOS ultra-wideband low noise amplifier (UWB LNA) with forward body bias technique for wireless applications. The UWB LNA is designed and simulated using 0.13-μm technology in Cadence software. The proposed UWB LNA consists of two stage common-source (CS) amplifiers with a forward body bias technique. A source degenerated inductor is used at the first stage to achieve a wideband input matching and high linearity. At the second stage, a shunt-peaking inductor is employed to enhance gain at higher frequency. The simulation results indicate that the proposed UWB LNA achieves a power gain (S21) of 10 dB, an input return loss (S11) is less than -5 dB, a minimum noise figure (NF) of 8.5 dB in the frequency range of 3.1- 6.0 GHz with power dissipation of 17.2 mW. The linearity analysis shows a 1 dB compression point (PldB) of-9 dBm and the third-order intermodulation intercept points (IIP3) of 4 dBm are achieved. The proposed UWB LNA's layout is 0.68 mm~2.