Design of 3.1-10.6 GHz ultra-wideband CMOS low noise amplifier with current reuse technique

摘要

A new low complexity ultra-wideband 3.1-10.6 GHz low noise amplifier (LNA), designed in a chartered 0.18 μm RFCMOS technology, is presented in this paper. The ultra-wideband LNA only consists of two simple amplifiers with an inter-stage inductor connected. The first stage utilizing a resistive current reuse and dual inductive degeneration techniques is used to attain a wideband input matching and low noise figure. A common source amplifier with inductive peaking technique as the second stage achieves high flat gain and wide the -3 dB bandwidth of the overall amplifier simultaneously. The implemented ultra-wideband LNA presents a maximum power gain of 15.6 dB, a high reverse isolation of -45 dB and a good input/output return losses are better than -10 dB in the frequency range of 3.1-10.6 GHz. An excellent noise figure (NF) of 2.8-4.7 dB was obtained in the required band with a power dissipation of 14.1 mW under a supply voltage of 1.5 V. An input-referred third-order intercept point (IIP3) is -7.1 dBm at 6 GHz. The chip area including testing pads is only 0.8 mm × 0.9 mm.