Microstructural Characterization of 3C-SiC Layers, Grown Epitaxially on 4H-SiC Substrates by CVD

摘要

This work was performed on 3C-SiC layers grown on 4H-SiC substrates by chemical vapour deposition after a surface pre-treatment using GeF_4 gas. By means of TEM, the effects of different GeH_4 fluxes in the 3C layer quality has been studied and compared. An optimal GeH_4 flux permits to drastically reduce twin boundaries but another type of defect occurs and has been widely studied in this paper.