Dielectric Properties of Thin Tantalum Oxide Layers at Solid Tantalum Capacitors

摘要

In this paper MIS (Metal-Insulator-Semiconductor) Ta_2O_5 capacitor has been studied in terms of dielectric relaxation with a low frequency dielectric spectroscopy. The results acquired for Ta_2O_5 show a relaxation peak in the temperature and frequency range available, 187 K – 385 K, 1 Hz - 10 MHz. The loss peak frequency follows the Arrhenius law dependence with the activation energy of 0.048 eV. In conductivity spectra, Ta_2O_5 film exhibits a steady–state value at low frequencies and a monotonous increase at high frequencies depending on temperature. The observed conductivity followed a slightly superlinear power law.