Method for making thin film tantalum oxide layers with enhanced dielectric properties and capacitors employing such layers

摘要

The present applicants have discovered a method for making thin films comprising tantalum oxide that enhances the dielectric constant with or without TiO.sub.2 doping. Specifically, applicants have discovered sputtering Ta.sub.2 O.sub.5 in an oxygen-rich ambient at a temperature in excess of 450 C. and preferably in excess of 550. degree. C., produces a new crystalline phase thin film having enhanced dielectric properties.