首页>
外国专利>
Thin film capacitor having multi-layer dielectric film including silicon dioxide and tantalum pentoxide
Thin film capacitor having multi-layer dielectric film including silicon dioxide and tantalum pentoxide
展开▼
机译:具有包括二氧化硅和五氧化钽的多层介电膜的薄膜电容器
展开▼
页面导航
摘要
著录项
相似文献
摘要
A capacitor and a method of forming the same, one embodiment of which includes depositing a multi-layer dielectric film between first and second spaced-apart electrodes. The multi-layer dielectric film includes first and second layers that have differing roughness. The layer of the dielectric film having the least amount of roughness is disposed adjacent to the first electrode. After depositing the second layer of the dielectric film adjacent to the first layer, the second layer is annealed. An exemplary embodiment of the thin film capacitor forms the dielectric material from silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5).
展开▼
机译:电容器及其形成方法,其一个实施例包括在第一和第二间隔开的电极之间沉积多层介电膜。多层介电膜包括具有不同粗糙度的第一层和第二层。具有最小量粗糙度的电介质膜层邻近于第一电极设置。在沉积与第一层相邻的第二层介电膜之后,对第二层进行退火。薄膜电容器的示例性实施例由二氧化硅(SiO 2 Sub>)和五氧化钽(Ta 2 Sub> O 5 Sub>)形成介电材料。
展开▼