首页> 外文会议>日本セラミックス協会年會 >Epitaxial growth of SrTiO3 film on MgO single crystal substrate
【24h】

Epitaxial growth of SrTiO3 film on MgO single crystal substrate

机译:MgO单晶基板上SRTIO3薄膜的外延生长

获取原文

摘要

SrTiO3 films were prepared on (100) MgO single crystal substrate by laser chemical vapor deposition. With increasing deposition temperature from 1023 to 1203 K, the orientation of the SrTiO3 films changed from (111) to (100). (100)-oriented SrTiO3 films were epitaxially grown at temperature 1120–1203 K with in-plane orientation. (111)-oriented SrTiO3 films had a columnar structure with pyramidal caps, while (100)-oriented SrTiO3 films had a dense cross section, and rectangular-shaped texture was formed on the film surface. Deposition rate of (100)-oriented SrTiO3 films was 13 μm h~(?1).
机译:通过激光化学气相沉积在(100)MgO单晶基板上制备SRTIO3薄膜。随着1023至1203 k的沉积温度的增加,SRTIO3膜的取向从(111)变为(100)。 (100) - 以面内取向在温度1120-1203 k下外延生长的SRTIO3薄膜。 (111) - 定向的SRTIO3薄膜具有柱状结构,具有金字塔序列,而(100)的SRTIO3膜具有致密的横截面,在膜表面上形成矩形纹理。 (100)的SRTIO3薄膜的沉积速率为13μmH〜(?1)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号