Plasma Enhanced Chemical Vapor Deposition time effect on Multi-Wall Carbon Nanotube growth using C_2H_2 and H_2 as Precursors

摘要

Multi-wall carbon nanotube (MWCNT) structures were grown on cobalt catalyst layer through Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Acetylene (C_2H_2) and hydrogen (H_2) are used as precursors during the PECVD process. The morphology structures of the MWCNTs grown under different PECVD time were investigated and characterized using Scanning Electron Microscope (SEM). The effect of the PECVD time on the MWCNT growth is studied by varying the PECVD time at 45 sec and 600 sec. The morphology structures suggest that the growth rate is proportional to the PECVD time under the similar setting condition of pressure, acetylene flow-rate and temperature.