InGaAs FinFET Modeling Using Industry Standard Compact Model BSIM-CMG

摘要

In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIMCMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen in carrier mobility behavior of InGaAs FinFETs compared to silicon devices can be accounted for in the model. Furthermore, the calibrated model is used for performance projection in these devices. It is found that parasitic resistance and mobility reduction with vertical field limit the performance of these devices.