Three-Dimensional High-order Nano-rod Formation Using a Hydrogen-assisted Deep Reactive Ion Etching

摘要

We report the formation of three-dimensional nano-sized vertical features on silicon and amorphous silicon films by means of a hydrogen-assisted deep reactive ion etching. The thickness of amorphous silicon has been varied between 5 and 10μm. The adhesion quality of relatively thick amorphous Si films has allowed deep micro and nano-machining features on silicon and glass substrates. Apart from optical photo-lithography, high precision nano-sphere colloidal lithography and electron beam lithography has been exploited to realize ultra-small features on the amorphous silicon. Scanning electron microscopy has been extensively used to study the evolution of three-dimensional features. Such 3-D structures are suitable for future MEMS and NEMS-based devices on glass and silicon substrates.