首页> 外文会议>IEEE International Conference of Electron Devices and Solid-State Circuit >A compact SPICE model for bipolar resistive switching memory
【24h】

A compact SPICE model for bipolar resistive switching memory

机译:双极电阻切换存储器的紧凑型香料模型

获取原文

摘要

In this paper, we successfully develop a compact model for bipolar resistive switching memory using Verilog-A. Fundamental I–V characteristics of RRAM are physically and yet simply represented by this model. Since the Verilog-A modeling is flexible and portable for many circuit simulators, the proposed modeling technique can be widely used.
机译:在本文中,我们使用Verilog-a成功开发了双极电阻开关内存的紧凑型号。 RRAM的基本I-V特征是本型号的物理且简单地代表。由于Verilog-A建模是灵活的,并且对于许多电路模拟器来说,所提出的建模技术可以广泛使用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号