A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

摘要

A SPICE compact model is developed for metal-oxide-based resistive random access memory (RRAM). The model includes the critical impact of temperature change and temporal variation. Using experimental data from $hbox{HfO}_{x}$-based RRAM, the model reproduces both the voltage–time relationship and the cycle-to-cycle variation in the RESET of the memory cells.