Impact of nonintentional Al impurity to carrier lifetime and diffusion in sublimation grown 3C heterostructures

摘要

Using optical techniques, we analyzed an impact of non-intentional Al mpurity and twin boundaries to photoelectrical properties of sublimation-grown 3C heterostructures. Differential transmission techniques revealed Al related contribution to probe beam absorption with cross-section σ_(Al)=(1.8±-0.5)x10~(-17) cm~2 at 1064 nm, being four times stronger that the free-carrier absorption cross-section at given wavelength. Temperature dependent carrier recombination rates provided trap activation energy of 170 and 210 meV in two samples with different Al concentration. Saturation of probe beam absorption with excitation allowed determination of electrically active Al concentration, not gettered at grain boundaries. Increase of room-temperature mobility with injection in the highly defective layer and the corresponding lifetime decrease pointed out contribution of point and structural defects to carrier scattering.