A VOLTAGE-TUNABLE TWO-COLOR InGaAs/AlGaAs QUANTUM WELL INFRARED PHOTODETECTOR

摘要

A voltage-tunable two-color multiple quantum well infrared photodetector was fabricated with two bands at 6.0 and 10.3μm. The molecular beam epitaxy grown structure consists of two stacks of n-type InGaAs wells and GaAs/AlGaAs superlattice barriers. The 6.0μm band was found to be dominant at low bias voltages while the 10.3μm band is dominant at high bias voltages. The optical absorption measurements confirm the presence of both bands. Furthermore, the transfer matrix method is used to estimate the peak position energies of the intersubband transitions in the two stacks.