Ultra-high sensitivity InGaAs/AlGaAs/InGaAs triple-coupled quantum well infrared photodetector

摘要

An ultra-high sensitivity triple-coupled quantum well infrared photodetector using a high-strain n-type InGaAs/AlGaAs/InGaAs asymmetrical coupled quantum well structure has been developed for 8-14 /spl mu/m detection. The maximum responsivity and detectivity with 45/spl deg/ facet illumination were found to be 2.71 A/W and 2.21/spl times/10/sup 10/ cmHz/sup 12//W at /spl lambda//sub p/=9.6 /spl mu/m, V/sub b/=5 V, and T=30 K.