Effect of Growth Temperature on Number of Layers and Electrical Properties of Graphene Grown on Copper Film using LPCVD Method

摘要

Graphene is a wonder material of 21st century with two dimensional honeycomb like structure. we propose the synthesis of graphene using Low Pressure Chemical Vapor Deposition with C_2H_2 as the source gas and H_2 as the carrier gas at four different temperatures. The as grown samples have been characterized by FESEM, Raman spectroscopy and DC conductivity. We emphasized the effect of growth temperature on the properties of as-grown graphene and studied that which temperature is suitable to lower the number of layers.