ATOMIC LAYER ETCHING METHOD OF GRAPHENE CAPABLE OF PARTLY ETCHING GRAPHENE INCLUDING THE THIN FILM OF OVERLAPPED MULTI-LAYER GRAPHENE WHILE MINIMIZING PHYSICAL AND ELECTRICAL DAMAGE

摘要

PURPOSE: An atomic layer etching method is provided to control graphene etching with an atom as a unit, to selectively control the etching depth of graphene, to be processed uncomplicatedly, and to be commercialized.;CONSTITUTION: An atomic layer etching method includes the following steps: absorbing a reactive radical on the surface of graphene; irradiating an energy source in graphene absorbed in the reactive radical; the two steps are repeated over two times; the graphene includes the thin film of overlapped multi-layer graphene; a singular layer of the thin film of graphene is etched by performing the atomic layer etching method one time; the reactive radical is generated with plasma.;COPYRIGHT KIPO 2013