GRAPHENE MANUFACTURING METHOD, GRAPHENE MANUFACTURING METHOD ETCHING GRAPHENE ATOMIC LAYER, GRAPHENE BENDING TRANSISTOR HAVING WAFER COMBINATION METHOD, AND GRAPHENE BENDING TRANSISTOR

摘要

Provided in the present invention is a method for manufacturing low temperature direct growth graphene directly growing on a substrate at low temperature. Also, provided in the present invention is a method for manufacturing of single layer or multilayer graphene. And, provided in the present invention is multilayer graphene directly growing on a substrate. Provided in the present invention are single layer graphene uniformly distributed on the upper part of a carbon dissolved layer, and a method for manufacturing single layer or multilayer graphene by radiating an energy source on multilayer graphene after growing the multilayer graphene.;COPYRIGHT KIPO 2016