Growth method of nitride epitaxial layer using high temperature grown buffer layer

摘要

A method for growing an epitaxial layer of a nitride semiconductor using a high temperature grown buffer layer is provided to easily grow an epitaxial layer of the same kind as a high temperature grown buffer layer on the high temperature grown buffer layer by growing a buffer layer of a nitride semiconductor on a substrate at a temperature higher than a proper growth temperature of a real epitaxial layer instead of a low temperature buffer layer. A III-group element and a nitrogen element are supplied to a substrate disposed in a chamber to grow a nitride semiconductor buffer layer at a temperature higher than an epitaxial layer growth temperature(S1). The supply of the III-group element is disconnected to convert the nitride semiconductor buffer layer into a nitride semiconductor buffer layer having a two-dimensional uniform thickness(S2). The temperature of the substrate is reduced to the epitaxial layer growth temperature(S3). The III-group element and the nitrogen element are supplied at the epitaxial layer growth temperature to grow a nitride semiconductor epitaxial layer of the same kind as the nitride semiconductor buffer layer(S5).