首页> 外文会议>Nanomechanical Testing in Materials Research and Development Conference >INDENTATION SIZE EFFECT AND 3D DISLOCATION STRUCTURE EVOLUTION IN (001) ORIENTED SrTiO_3: HR-EBSD AND ETCH-PIT ANALYSIS
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INDENTATION SIZE EFFECT AND 3D DISLOCATION STRUCTURE EVOLUTION IN (001) ORIENTED SrTiO_3: HR-EBSD AND ETCH-PIT ANALYSIS

机译:(001)定向SRTIO_3:HR-EBSD和蚀刻坑分析中的压痕尺寸效应和3D位错结构演化

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Most crystalline materials exhibit an indentation size effect (ISE), i.e., an intrinsic increase in hardness with decreasing penetration depth. During indentation testing, the material underneath the indenter is heavily deformed, introducing strain gradients in the materials, causing high local dislocation densities. In the present work, the three-dimensional (3D) dislocation structure evolution and ISE in (001) oriented Strontium Titanate (STO) have been studied by direct observation of dislocations using chemical etching and high-resolution electron backscattered diffraction (HR-EBSD) analysis. The sequential polishing, etching and imaging technique was used to reveal the 3D dislocation etch-pit structure at various sub-surface depths using confocal laser and scanning electron microscopy (Fig. 1). The 3D dislocation etch-pit analysis of spherical indentations confirm that, at the early stage of plastic deformation, the dislocation pile-ups were aligned in <100> directions, lying on {110}_(45) planes, inclined at 45° to the (001) surface. At higher mean contact pressure and larger indentation depth, however, dislocation pile-ups along <110> directions appeared, lying on {110}_(90) planes, perpendicular to the (001) surface. These observations were qualitatively confirmed by corresponding direct Molecular Dynamics Simulations.
机译:大多数结晶材料表现出压痕尺寸效应(ISE),即,本征增加硬度随穿透深度。在压痕试验,压头下面的材料是大量变形,在材料中引入应变梯度,从而导致高的局部的位错密度。在目前的工作中,三维(3D)的位错结构演变和ISE在(001)取向的钛酸锶(STO)已经使用化学蚀刻和高分辨率电子背散射衍射研究了位错的直接观察(HR-EBSD)分析。顺序抛光,蚀刻和使用成像技术揭示在各个子表面深处使用共聚焦激光和扫描电子显微镜(图1)的三维位错蚀坑的结构。球形凹痕的三维位错蚀坑的分析证实,在塑性变形的早期阶段中,位错堆积的在<100>方向,躺在{110} _(45)的平面,在倾斜45°°到对齐(001)表面。在较高的平均接触压力,以及较大的压入深度,但是,沿位错堆积的<110>方向的出现,躺在{110} _(90)的平面,垂直于(001)表面。这些观察结果定性相应的直接分子动力学模拟证实。

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