Optimize of shrink process with X-Y CD bias on hole pattern

摘要

Gridded design rules is major process in configuring logic circuit used 193-immersion lithography. In the scaling of grid patterning, we can make 10nm order line& space pattern by using multiple patterning techniques such as self-aligned multiple patterning (SAMP) and litho-etch- litho-etch (LELE) . On the other hand, Line cut process has some error parameters such as pattern defect, placement error, roughness and X-Y CD bias with the decreasing scale. We tried to cure hole pattern roughness to use additional process such as Line smoothing. Each smoothing process showed different effect. As the result, CDx shrink amount is smaller than CDy without one additional process. In this paper, we will report the pattern controllability comparison of EUV and 193-immersion. And we will discuss optimum method about CD bias on hole pattern.