Optical properties of thin films formed by carbon deposition in methane plasma and subsequent annealing

摘要

Films with a thickness of several tens of nm were formed by deposition of carbon atoms in methane plasma on various substrates and subsequently heat treated at temperatures from 650°C to 750°C. Methods of Raman spectroscopy, spectrophotometry in the ultraviolet and visible regions, current-voltage characteristics were used for research the dependence of the photocurrent on voltage. An analysis of the results of optical studies showed that the films contain graphite crystallites with a size of about 5 nm. An increase in the photocurrent under illumination was observed for all samples. The largest increase in the photocurrent (up to several mA) was observed for carbon films formed on the silicon surface.