Electron properties in thin MoS_2 films grown by CVD method

摘要

Monolayer MoS_2 is a promising two-dimensional material for electronic and optoelectronic devices. In this work, chemical vapor deposition (CVD) is performed for the synthesis of MoS_2 films on SiO_2. Electron properties of obtained samples are examined by means of x-ray photoelectron spectroscopy (XPS) and angle-resolved photoemission spectroscopy (ARPES). The effect of defects on the electron transport properties of MoS_2 compared using density functional theory (DFT) as implemented in the Quantum ESPRESSO software package.