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PHYSICAL DESIGN FOR AN ARM CHIP UNDER DEEP SUBMICRON TECHNOLOGY

机译:深度亚微米技术下的ARM芯片的物理设计

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The reduction of technology size presents lots of new challenges to the physical design of VLSI chips, such as timing closure, routability, signal integrity, IR drop and antenna effect. This paper introduces the physical design flow of an ARM processor chip, specifically describes some of the key steps, such as floorplan, clock tree synthesis, design for manufacturability, and it can provide a reference for other similar designs. The chip using SMIC 130nm process includes ADC, PLL and a plurality of SRAM. The master clock frequency is 200M and the chip area is 4mm * 5mm.
机译:减少技术规模对VLSI芯片的物理设计提供了许多新的挑战,例如时序闭合,无排水性,信号完整性,IR下降和天线效应。本文介绍了ARM处理器芯片的物理设计流程,具体描述了一些关键步骤,如挡板,时钟树合成,可制造性设计,并且可以为其他类似设计提供参考。使用SMIC 130NM过程的芯片包括ADC,PLL和多个SRAM。主时钟频率为200米,芯片面积为4mm * 5mm。

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