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Effect of vanadium doping on the properties of high Curie point ferroelectric strontium niobate ceramic

机译:钒掺杂对高居里点铁电锶铌酸盐陶瓷的影响

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Different levels of isovalent dopant vanadium were doped on the B site of Sr_2Nb_2O_7 to explore the doping effect on its dielectric and ferroelectric properties. A second phase could be detected with above 1 mol% V_2O_5 doping. The grains after doping remained anisotropic and plate-like. The samples are not dense, as there are pores present at the grain boundaries. The corrected dielectric constant for 0.1 mol%, 0.2 mol%, and 0.3 mol% V doped SNO at 1 MHz is around 46, 48 and 49, respectively, which indicates the effect of V doping on the increase of dielectric constant of SNO (ε_r is about 40 at 1 MHz). The Curie point T_c increased with the increase in the V doping level. The relatively high d_(33) (2.3 pC/N) measured from the non-dense and untextured samples indicates the potential effect of V_2O_5 doping on the improvement of piezoelectricity of SNO.
机译:不同水平的不均掺杂剂钒掺杂在SR_2NB_2O_7的B位点上,探讨对其电介质和铁电性能的掺杂效果。可以以高于1mol%V_2O_5掺杂检测第二阶段。掺杂后的颗粒仍然是各向异性和板状的。样品不致密,因为晶界处存在孔隙。校正的介电常数为0.1mol%,0.2mol%和0.3mol%V掺杂的SnO,分别为46,48和49,表明V掺杂对SnO(ε_R的介电常数增加的影响大约40米,在1 MHz)。 CURIE点T_C随着V掺杂水平的增加而增加。从非密集和未致致致致致致致致致致致致致致致致致致致致细化的样本测量的相对高的D_(33)(2.3pc / n)表示V_2O_5掺杂对SnO压电性改善的潜在效果。

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