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Effect of vanadium doping on sintering and dielectric properties of strontium barium niobate ceramics

机译:钒掺杂对铌酸锶钡陶瓷的烧结及介电性能的影响

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摘要

Strontium barium niobate, Sr0.5Ba0.5Nb2O6 (SBN50) ceramics doping up to 3 wt% V2O5 were fabricated by solid state reaction route, starting from raw materials (oxides and carbonates) of analytical grade. The phase composition, microstructure and dielectric properties were investigated by X-ray diffraction, scanning electric microscope and impedance analyzer. The results show that the addition of V2O5 improves sintering densification of SBN ceramic samples. The relative density of the samples firstly increases and then slightly decreases with increasing amounts of V2O5 and sintering temperature. With the help of the additive of 1 wt% V2O5, the relative density of the sample sintered at 1,280 °C for 3 h can reached 97.2%. Only single tetragonal tungsten bronze phase SBN exists in all the doped samples. With increase in V2O5 content, the dielectric constant of SBN ceramics at both room temperature and in the vicinity of the phase transition temperature increases significantly and the Curie temperatures (Tc) obviously shifts to low temperature as well as the dielectric loss remains below 0.06. The diffuseness in the phase transition is found to increase with increase in vanadium doping level. The addition of V2O5 results in an increased grain size associated with rod-like grain growth.
机译:铌酸锶钡,Sr 0.5 Ba 0.5 Nb 2 O 6 (SBN50)陶瓷掺杂量最高为3 wt% V 2 O 5 是通过固态反应路线从分析级的原料(氧化物和碳酸盐)制备的。通过X射线衍射,扫描电镜和阻抗分析仪研究了相组成,微观结构和介电性能。结果表明,添加V 2 O 5 可以改善SBN陶瓷样品的烧结致密化。随着V 2 O 5 的增加和烧结温度的增加,样品的相对密度先增大然后减小。借助于1 wt%V 2 O 5 的添加剂,在1280°C下烧结3 h的样品的相对密度可以达到97.2%。在所有掺杂样品中仅存在单个四方钨青铜相SBN。随着V 2 O 5 含量的增加,室温和相变温度附近的SBN陶瓷介电常数显着提高,居里温度(Tc )明显转移到低温,并且介电损耗仍低于0.06。发现在相变中的扩散随着钒掺杂水平的增加而增加。 V 2 O 5 的添加导致与棒状晶粒生长相关的晶粒尺寸增加。

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