...
首页> 外文期刊>Journal of materials science >Effect of vanadium doping on sintering and dielectric properties of strontium barium niobate ceramics
【24h】

Effect of vanadium doping on sintering and dielectric properties of strontium barium niobate ceramics

机译:钒掺杂对铌酸锶钡陶瓷的烧结及介电性能的影响

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

Strontium barium niobate, Sr_(0.5)Ba_(0.5)Nb_2O_6 (SBN50) ceramics doping up to 3 wt% V_2O_5 were fabricated by solid state reaction route, starting from raw materials (oxides and carbonates) of analytical grade. The phase composition, microstructure and dielectric properties were investigated by X-ray diffraction, scanning electric microscope and impedance analyzer. The results show that the addition of V_2O_5 improves sintering densification of SBN ceramic samples. The relative density of the samples firstly increases and then slightly decreases with increasing amounts of V_2O_5 and sintering temperature. With the help of the additive of 1 wt% V_2O_5, the relative density of the sample sintered at 1,280 ℃ for 3 h can reached 97.2%. Only single tetragonal tungsten bronze phase SBN exists in all the doped samples. With increase in V_2O_5 content, the dielectric constant of SBN ceramics at both room temperature and in the vicinity of the phase transition temperature increases significantly and the Curie temperatures (Tc) obviously shifts to low temperature as well as the dielectric loss remains below 0.06. The diffuseness in the phase transition is found to increase with increase in vanadium doping level. The addition of V_2O_5 results in an increased grain size associated with rod-like grain growth.
机译:铌酸锶钡,Sr_(0.5)Ba_(0.5)Nb_2O_6(SBN50)陶瓷是通过固态反应路线从分析级的原材料(氧化物和碳酸盐)开始制备的,掺杂量高达3 wt%V_2O_5。通过X射线衍射,扫描电镜和阻抗分析仪研究了相组成,微观结构和介电性能。结果表明,添加V_2O_5可以改善SBN陶瓷样品的烧结致密化。随着V_2O_5含量的增加和烧结温度的升高,样品的相对密度先增大然后减小。借助1 wt%V_2O_5的添加剂,在1280℃下烧结3 h的样品的相对密度可以达到97.2%。在所有掺杂样品中仅存在单个四方钨青铜相SBN。随着V_2O_5含量的增加,室温和相变温度附近的SBN陶瓷的介电常数显着增加,居里温度(Tc)明显转变为低温,介电损耗保持在0.06以下。发现在相变中的扩散随着钒掺杂水平的增加而增加。 V_2O_5的添加导致与棒状晶粒生长相关的晶粒尺寸增加。

著录项

  • 来源
    《Journal of materials science》 |2010年第2期|168-172|共5页
  • 作者单位

    Department of Materials Science and Engineering, Guilin University of Electronic Technology, 541004 Guilin, People's Republic of China;

    Department of Materials Science and Engineering, Guilin University of Electronic Technology, 541004 Guilin, People's Republic of China;

    Department of Materials Science and Engineering, Guilin University of Electronic Technology, 541004 Guilin, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号