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STRONTIUM BISMUTH NIOBATE TANTALATE FERROELECTRIC THIN FILM
STRONTIUM BISMUTH NIOBATE TANTALATE FERROELECTRIC THIN FILM
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机译:铌酸铋铋钛酸盐铁电薄膜
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摘要
Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi2+E(NbXTa2-X)O9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
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机译:用于集成存储电路的薄膜铁电材料,例如FERAMS等,包含经验式为SrBi2 + E(NbXTa2-X)O9 + 3E / 2的钽酸锶铋铋,其中E为代表过量的数字铋的范围从零到2; X为表示过量的铌的数值,范围为0.01〜0.9。当受到单向电压脉冲的挑战时,薄膜表现出了出色的抗极化压印能力。
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