Characterization of Leakage Causing Visible Epitaxial Defects Nucleating from Crystal Defects in the Substrate

摘要

In high volume manufacturing of SiC products, it is important to isolate and eliminate failure mechanisms at the source rather than rely on backend tests. As we enter volume production on 150mm substrates, significant cost and reliability improvements can be achieved if potential sources of defects are identified and removed. In this work we present the electrical effects of an epitaxial 'V' type defect, investigate and determine its source to a subset of screw dislocations in the substrate, and provide a way of screening such heavily defective substrates even before epitaxial growth.