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Practical Evaluation Method of Oxygen Precipitation in the Czochralski Silicon

机译:Czochralski硅氧沉淀的实用评价方法

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摘要

A simple, practical way to evaluate process-induced oxygen precipitates was investigated. Effective values of fastest nucleation point (T_C, J_(max)) were derived as parameters of precipitate densities from the as-grown oxygen precipitate nuclei distributions by fitting them into the cumulative function F(T) of the nucleation rate J = J(Oi, C_V, T). Precipitate densities were clearly explained by T_C and J_(max) in the entire Oi and point defect region. From the relations of Oi and Cv on the fastest nucleation point in the nucleation rate, T_C is closely related to the C_V and expected as a potential indicator of evaluating the practical CZ-Si manufacturing.
机译:研究了评估过程诱导的氧沉淀物的简单实用方式。最快成核点(T_C,J_(MAX))的有效值衍生成来自生长氧沉淀核分布的沉淀密度的参数,通过将它们装配到成核速率J = J的累积函数f(t)(Oi ,c_v,t)。通过整个OI和点缺陷区域的T_C和J_(MAX)清楚地解释沉淀密度。从OI和CV的关系处于成核速率的最快成核点,T_C与C_V密切相关,预期是评估实用CZ-SI制造的潜在指标。

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