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Effect of Ti Sputtering Current on Structure of TiCrN Thin Films Prepared by Reactive DC Magnetron Co-Sputtering

机译:Ti溅射电流对反应性DC磁控磁阻溅射制备的TiCrn薄膜结构的影响

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Titanium chromium nitride (TiCrN) thin films were deposited by reactive DC magnetron co-sputtering. The effect of Ti sputtering current (In) on the structure of the TiCrN thin films were investigated. The crystal structure, microstructure, thickness, roughness and elemental composition were characterized by glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited films exhibited a nanostructure with a crystallite size of less than 40 nm. The crystal size decreased from 39.9 nm to 33.5 nm, while the lattice constants increased from 4.139 A to 4.162 A, with increasing of the Ti sputtering current. The film thickness and roughness were found to increase from 397 nm to 615 nm and 3.7 nm to 6.3 nm, respectively, with increasing of the Ti sputtering current. The composition of the as-deposited films varied with the Ti sputtering current. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the Ti sputtering current.
机译:通过反应性DC磁控磁阻溅射沉积氮化钛氮化铬(TiCrN)薄膜。研究了Ti溅射电流(In)对TiCrN薄膜结构的影响。通过透明角X射线衍射(GAXRD),场发射扫描电子显微镜(Fe-SEM),原子力显微镜(AFM)和能量分散X射线光谱(X射线光谱(所述)来表征晶体结构,微观结构,厚度,粗糙度和元素组合物。 EDS)技术分别。结果表明,所有沉积的薄膜形成为(Ti,Cr)固溶溶液。沉积的薄膜表现出纳米结构,微晶尺寸小于40nm。晶体尺寸从39.9nm至33.5nm降低,而晶格常数从4.139a到4.162a增加,随着Ti溅射电流的增加。发现膜厚度和粗糙度分别从397nm至615nm和3.7nm至6.3nm增加,随着Ti溅射电流的增加。沉积膜的组成随Ti溅射电流而变化。由于增加Ti溅射电流,Fe-SEM的横截面分析显示了紧凑的柱状和致密的形态。

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