3D MEMS WAFER LEVEL PACKAGING EXEMPLIFIED BY RF CHARACTERIZED TSVs TGVs AND INTEGRATION OF BONDING PROCESSES

摘要

This paper presents successful manufacturing of metalized Through Silicon Vias (TSVs) and Through Glass Vias (TGVs) for RF applications. RF characterization showed low insertion losses for both TSVs and TGVs, with less than -0.04 dB per coplanar TSV at 5 GHz frequency and around -0.006 dB at 5 GHz for the TGVs. Electrical DC resistance measurement was conducted on 644 TSVs, divided on four different wafers and showed a via resistance of 20.4 mOhm. The overall TSV yield is in the high 90% range. An extensive reliability and failure analysis was conducted, focusing on understanding the failing TSVs to further improve the yield. X-ray inspection was used in order to quickly screen and identify the few defective TSVs. Also, a description of the via integration capabilities provided by Silex Microsystems is presented, including a discussion about the cost of ownership. The work has been executed within the EU consortiums EPAMO and PROMINENT.