Growth of tensile-strained Ge layer and highly strain-relaxed Geinf1amp;#x2212;x/infSninfx/inf buffer layer on silicon by molecular beam epitaxy

摘要

Highly strain-relaxed Ge1−xSnx layers were grown directly on Si(100) by MBE firstly. XRD and AFM measurements demonstrate a good crystalline quality and a relatively flat surface. Ge with 0.82% tensile strain were grown on the Ge0.895Sn0.105/Si, and the tensile-strain value decreases with increasing thickness of Ge epilayers.