Sputtering Characteristics in High Power Pulsed Diode Sputtering

摘要

The characteristics in High power pulsed diode sputtering is studied in this paper.Cu target is chosen with low sputtering threshold and high self-sputtering coefficient.Current waveforms are detected to state the rule with Argon pressure, pulse width, frequency and target voltage.All of experiments were operated in the vacuum chamber with dimension of Φ560mm × 300mm, one rotary pump for low pressure and one cryopump for high pressure, the basic pressure was 2 × 10-4 Pa.The Cu target dimension is Φ50 mm ×5 mm, with 99.99％ purity.Voltage and current waveforms are observed by an oscilloscope with a voltage probe and a current monitor.Plasma densities are used to investigate the effect of Argon pressure on the pulsed glow discharge.The pulsed glow discharge is constituted by a starting phase, which is shortened by the increase of target voltage and Argon pressure, and a later stabilizing phase, and when the target voltage and Argon pressure were both in high level, self-sputtering was kindled and there would be a slight current decrease before stabilizing phase.Target current is significantly influenced by target voltage and Argon pressure, and the target-substrate distance and geometry structure have little to do with the current.Plasma density has an apparenthysteresis when compared with the target current, and when glow discharge ceased in one pulse, the plasma density will maintain for a while, and for longer when pressure increased, instead of decreasing immediately.