Properties of I-doped CuI Thin Films by Chemical Vapor Deposition (CVD)

摘要

In this paper, we present the properties of I-doped CuI thin films at different concentration of iodine dopant (e.g. 10mg, 20mg, 30mg, 40mg and 100mg). The doping of CuI was done by using double furnace chemical vapor deposition (CVD) method. The effects of I-doped CuI to its surface morphology and electrical were studied. The effect of iodine doping to surface morphology was measured by field emission scanning electron microscopy (FESEM). The morphology of all thin films shows insignificance changes in grain size, grain boundaries and particle structure as the doping concentration varies. For the electrical properties, high current at constant voltage of -5V to 5V was obtained. The resistivity of 10~(-1) was obtained for undoped CuI thin films. While, for the series of I-doped CuI thin films, the resistivity of 10~(-2) was obtained. The excess of hole conductor in the I-doped CuI thin films enhances the electrical conductivity of the films.