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Structural and Optical Properties of the New Absorber Cu_2ZnSnS_4 Thin Films Grown by Vacuum Evaporation Method

机译:通过真空蒸发方法生长的新吸收剂Cu_2ZnSNS_4薄膜的结构和光学性质

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This work studies dependences of structural and optical properties on the substrate temperature of Cu_2ZnSnS_4 thin films deposited onto glass substrates by thermal evaporation method. The thicknesses of the films were in the range 500-600 nm. Their structure and composition are studied by X-ray diffraction, scanning electron microscopy, dispersive X-ray spectroscopy, optical reflectance and transmittance measurements. The variations of the Microstructural parameters, such as crystallite size(L), dislocation density(δ), stacking fault probability (α) and strain(ε), with substrate temperature were investigated. The results show the crystallite sizes increaser as the substrate temperature increases. The variation of the dislocation density and the stacking fault probabilities and strain decrease as the substrate temperature increases. Optical measurements show that all the CZTS thin films have relatively high absorption coefficient between 10~4 and 10~5 cm~(-1) with p-type conductivity.
机译:该研究通过热蒸发方法研究沉积在玻璃基板上的Cu_2ZnSNS_4薄膜的结构和光学性质的依赖性。薄膜的厚度在500-600nm的范围内。通过X射线衍射,扫描电子显微镜,分散X射线光谱,光学反射和透射率测量研究了它们的结构和组合物。研究了微观结构参数的变化,例如微晶尺寸(L),位错密度(δ),堆叠故障概率(α)和菌株(ε),具有基板温度。结果表明,随着基质温度的增加,微晶尺寸的尺寸增加。随着基板温度的增加,位错密度和堆叠故障概率和应变减小的变化。光学测量表明,所有CZTS薄膜的吸收系数在10〜4和10〜5cm〜(-1)之间具有p型导电性。

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