A brief review of n-type doping of GaAs, InGaAs and InP using ion implantation is presented. While the diffusion of the amphoteric dopant Si is not a significant issue its activation is limited to around 1×10~(19)/cm~3. This has prompted many studies into factors that might affect dopant activation including co-implantation to force site selection, damage and amorphization effects, elevated temperature implants and capping effects. A summary of these results is discussed. With interest in using III-V materials for n-channel devices in future sub 15 nm devices there is also an increasing interest in low energy implants. This suggests the role of surface degradation upon annealing will become even more important. Recent results along these lines are presented.
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