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Method of Tuning Doping Concentration in III-V Compound Semiconductor through Co-Doping Donor and Acceptor Impurities
Method of Tuning Doping Concentration in III-V Compound Semiconductor through Co-Doping Donor and Acceptor Impurities
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机译:通过共掺杂施主和受主杂质来调整III-V化合物半导体中掺杂浓度的方法
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摘要
A method includes epitaxially growing a first III-V compound semiconductor, wherein the first III-V compound semiconductor is of p-type. The first III-V compound semiconductor is grown using precursors including a first precursor comprising Cp2Mg, and a second precursor comprising a donor impurity. A second III-V compound semiconductor is grown overlying and contacting the first III-V compound semiconductor. The second III-V compound semiconductor is of n-type.
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