Surface preparation of 4° off-axis 4H-SiC substrate for epitaxial growth

摘要

Results of surface preparation on Si-face 4° off-cut 4H-SiC substrates are presented in this paper. The influences of two types of etchants, i.e. hydrogen chloride (HC1) and only hydrogen (H2), were investigated by Nomarski microscopy and AFM. The experiments were performed in a hot wall CVD reactor using a TaC coated susceptor. Four etching temperatures, including 1580 °C, 1600 °C, 1620 °C and 1640 °C, were studied. In-situ etching with only H_2 as ambient atmosphere is found to be the optimal way for the SiC surface preparation. Using HC1 at temperature higher than 1620 °C could degrade the substrates surface quality.