An Experimental Study on Compact Equivalent Circuit Modeling of SiC Schottky Barrier Didoes

摘要

Circuit simulations assist in the design and evaluation of power conversion circuits. A compact and accurate power device model is required to obtain appropriate circuit simulation results. This study examines the compact equivalent circuit modeling of a SiC Schottky barrier diode (SiC SBD) and evaluates the developed model during the turn-off switching operation. In this study, two SiC SBDs having different specifications are modeled and evaluated. The results show that the switching characteristics of SiC SBDs can be modeled using the equivalent circuit, whose configurations and parameters are identified from their static I?V and C?V characteristics.