UV Sensitive Indium Gallium Zinc Oxide MOS- FET Fabricated By RF Magnetron Sputtering Method

摘要

Transparent indium gallium zinc oxide (IGZO) thin film was fabricated on SiO_2/Si substrate by radio-frequency magnetron sputtering method. The IGZO thin film was characterized by X-ray diffraction, UV-VIS spectrometer, X-ray photoelectron energy spectrum to determine its optical, structural properties and binding energy information. The IGZO thin film was employed to construct metal-oxide-semiconductor field effect transistors (MOS-FET), which showed an on/off current of about 10~3 . When the device was illuminated by UV light, the drain-to-source current was increased by 15 folders at -5 V gate voltages. The result indicates that the IGZO MOS-FET is sensitive to UV light.